Ⅰ. Menene yanayin aikace-aikacen samfuran yumbu na silicon carbide?

Silicon carbide (SiC) yumbura ana amfani da su sosai a cikin mahimman kayan aikin kayan aiki mai mahimmanci a cikin masana'antar semiconductor da masana'antar photovoltaic saboda kyakkyawan juriyar yanayin zafi, juriya na lalata, haɓakar haɓakar thermal da ƙarancin haɓaka haɓakar thermal. Waɗannan su ne takamaiman yanayin aikace-aikacen samfuran samfuran:

Silicon carbide jirgin ruwa

aiki:

SiC Boat yawanci ana amfani dashi don ɗaukar wafers (kamar siliki wafers ko siliki carbide wafers) don watsawa da sakawa a cikin matakai masu zafi.

Bayanan aikace-aikacen:

Filin sarrafa Semiconductor: A cikin tanderun watsawa da tanderun iskar oxygen, jirgin yana buƙatar yin aiki da ƙarfi na dogon lokaci a cikin yanayin zafi mai zafi sama da 1000 ° C don guje wa gurɓatawa ko gurɓata wafer saboda damuwa na thermal.

Masana'antar Photovoltaic: A cikin kayan aikin PECVD (flasma ingantacciyar sinadari mai tururi) kayan aiki, ana amfani da jirgin don tallafawa wafer siliki don saka fim ɗin anti-reflection silicon nitride, kuma yana buƙatar tsayayya da bam ɗin plasma mai girma da yanayin yanayin zafi.

Silicon carbide makera tube (SiC Reaction Tube)

Aiki: A matsayin ginshiƙi na babban ɗakin amsawar zafin jiki, yana ba da filin zafin jiki iri ɗaya da mahalli mara ƙarancin sinadarai.

Bayanan aikace-aikacen:

Masana'antar Semiconductor: A cikin tanderun iskar oxygen, bututun tanderun yana buƙatar tsayawa tsayin daka a cikin iskar oxygen ko yanayin tururin ruwa don guje wa sakin ƙazanta saboda iskar oxygen ko lalata.

Masana'antar Photovoltaic: A cikin tanderun watsawa, ana amfani da bututun tanderun don tsarin watsawar phosphorus (kamar shirye-shiryen ƙwayoyin PERC), kuma ya zama dole don tsayayya da lalata gas na acidic a cikin yanayin POCl₃.

Cantilever Paddle da Boat Holder

Aiki: Ana amfani da filafin cantilever don canja wurin jirgin ruwan crystal ta atomatik, kuma ana amfani da mariƙin jirgin don gyara matsayin jirgin ruwan crystal.

Bayanan aikace-aikacen:

A cikin tsarin wafer na semiconductor, kullun cantilever yana buƙatar kula da ƙarfin injina mai ƙarfi yayin ɗagawa da sauri da raguwa don guje wa karaya saboda gajiyar thermal; mariƙin jirgin ruwa yana buƙatar kiyaye daidaiton geometric a babban zafin jiki don hana karkatar da wafer.

Ⅱ. Menene jagororin aikace-aikacen kayan aikin siliki na siliki a cikin masana'antar photovoltaic da semiconductor?

Babban aikace-aikacen samfuran yumbu na silicon carbide an tattara su a cikin hanyoyin haɗin kayan aiki iri biyu:

Manuniya masu aiki	Kayan zane	Silicon carbide abu
Babban karfin kwanciyar hankali	Sauƙi don oxidize (> 500 ° C yana buƙatar kariya ta shafi)	Anti-oxidation (zai iya jure yanayin oxidizing 1600 ° C na dogon lokaci)
Chemical inertness	Sauƙaƙe don lalata su ta iskar acidic (kamar Cl₂, POCl₃)	Juriya na lalata acid da alkali (ciki har da kafofin watsa labarai masu ƙarfi kamar HF, HNO₃)
Hadarin gurɓataccen abu	Sauƙi don haifar da gurɓataccen ƙura, yana haifar da lahani na wafer	M surface, babu hadarin barbashi zubar
Chanarfin inji	Sauƙi don naƙasa a babban zafin jiki (high thermal expansion coefficient)	Babban taurin (taurin Mohs 9.2), juriya mai ƙarfi na thermal
Ƙararrawar ƙararrawa	Anisotropy, babban haɗarin zafi na gida	High thermal watsin (120 W/m`K), uniform zazzabi filin

Masana'antar Photovoltaic

PECVD tanderu: ana amfani da shi don saka fina-finai na anti-tunani (kamar silicon nitride). Silicon carbide sassan suna buƙatar yin tsayayya da ion bombardment lalacewa ta hanyar haske fitarwa a cikin jini na 400 ~ 500 ° C, yayin da guje wa gurɓatar fim.

Tanderu mai yaduwa: ana amfani da shi don yaduwar phosphorus/boron don samar da haɗin gwiwar PN. Silicon carbide makera bututu bukatar jure lalata daga POCl₃ ko BBr₃ gas a 800 ~ 1000 ° C da kuma tabbatar da doping uniformity.

Semiconductor masana'antu

Tanderun watsawa da tanderun oxidation:

Furnace mai yaduwa: ana amfani da shi don aikin annealing bayan dasa ion. Silicon carbide crystal kwale-kwalen yana buƙatar guje wa sakin ƙazanta na ƙarfe (kamar Fe, Ni), in ba haka ba zai haifar da ƙara yawan ɗigon wafer.

Oxidation tanderu: girma silicon dioxide yadudduka a bushe oxygen ko rigar oxygen muhallin. Silicon carbide murhu bututu bukatar kula da low oxygen permeability a wani babban zafin jiki na 1200 ° C don hana m oxide Layer kauri.

Ⅲ. Menene fa'idodin silicon carbide kayan akan graphite?

Kodayake kayan graphite suna da fa'idodin ƙarancin farashi da sauƙin sarrafawa, sun fi ƙasa da siliki carbide a cikin mahimman kaddarorin masu zuwa:

Takamaiman nazarin shari'a:

Dangane da ainihin kididdigar samarwa na Veteksemicon, a cikin tanderun watsa shirye-shiryen semiconductor, ana buƙatar maye gurbin jirgin ruwan graphite kowane watanni 3, yayin da jirgin ruwan silicon carbide zai iya wucewa sama da shekaru 2, kuma yawan amfanin ƙasa yana ƙaruwa da 5% ~ 10%.

Dangane da bayanan samarwa da Semixlab ya bayar, A cikin tsarin PECVD na hotovoltaic, filafin siliki carbide cantilever na iya ƙara ƙarfin baturi ta 2% ~ 5% saboda rashin gurɓataccen ƙwayar cuta.

Ⅳ. me yasa zabar Semixlab?

Semixlab babban masana'anta ne kuma mai siyarwa a China wanda ke mai da hankali kan binciken graphite da rufin saman SiC tsawon shekaru 20. Bayan shekaru na fasaha da bincike da ci gaba, mu SiC shafi tsarin iya cimma wani tsarki na fiye da 99.98%, kuma za mu iya siffanta silicon carbide kayayyakin na daban-daban tsarki da kuma farashin bisa ga aikace-aikace yanayin. Idan kana buƙatar samfur mafi girma mai tsabta, kamar lamba kai tsaye tare da samfuran wafer semiconductor, za mu iya samar da suturar CVD SiC, murfin CVD TaC da sauran hanyoyin aiwatarwa akan saman kayan aikin don saduwa da buƙatun fasaha daban-daban.