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CVD Silicon Carbide (SiC) Rufi

CVD Silicon Carbide (SiC) Rufi

Gida> Kayayyaki- TJNE > Farashin CVD > CVD Silicon Carbide (SiC) Rufi

Mai hana etching na ICP mai rufi na SiC
Mai hana etching na ICP mai rufi na SiC

LED Epitaxy Susceptor


Semixlab SiC Coated Graphite Susceptor wani madaidaicin injiniyan kayan aikin da aka ƙera don ci-gaban LED epitaxy da tsarin MOCVD. Gina tare da babban madaidaicin ginshiƙi na graphite mai girma kuma ana kiyaye shi ta babban rufin CVD silicon carbide (SiC), wannan mai ɗaukar hoto yana ba da ingantaccen dandamalin thermal don dumama wafer iri ɗaya da tsaftar ɗaki na dogon lokaci a ƙarƙashin matsanancin yanayin sarrafawa sama da 1100 ° C. Kowane mai cutarwa yana jujjuya ingantattun injina da sarrafa kayan haɗin kai don cimma ƙarancin ƙasa mai laushi a ƙasan Ra 0.2 μm, rage girman mannewa da hargitsin iskar gas a cikin injin MOCVD. Wannan ƙira yana haɓaka daidaituwar Layer na epitaxial, yana tsawaita rayuwar kayan aikin kuma yana rage mitar kulawa. Muna jiran ƙarin binciken ku.

description

Semixlab SiC Coated Graphite Susceptor don LED Epitaxy yana fasalta babban tushe mai graphite don kwanciyar hankali na thermal da babban murfin CVD SiC (Ra ≤0.2 μm) don juriya na lalata. Wannan tsarin yana tabbatar da canja wurin zafi iri ɗaya, rashin kuzarin sinadarai, da dogaro na dogon lokaci a cikin Epitaxy na LED MOCVD.

A cikin tsarin epitaxy na LED, SiC mai rufaffiyar graphite susceptor yana aiki ba kawai a matsayin mariƙin wafer na inji ba, amma azaman ainihin thermal da nau'in sarrafa sinadarai na tsarin MOCVD. Ita ce ke da alhakin fassarar shigar da kuzarin zafi daga RF ko tsarin dumama mai juriya zuwa daidaitaccen rarraba kuma bargarewar filin zafin jiki a tsakanin wuraren wafer da yawa. Maɗaukakin yanayin zafi mai zafi da ingantaccen bayanin martaba yana tabbatar da daidaiton wafer-to-wafer da intra-wafer yanayin zafin jiki - yanayi mai mahimmanci don cimma matsananciyar iko akan kauri na fim na GaN da AlGaInP, maida hankali na dopant, da ingancin crystal.

A lokaci guda, rufin SiC yana ba da shingen sinadarai mai ƙarfi wanda ke ba da kariya ga graphite mai tushe daga raguwar hydrogen, lalatawar ammonia, da haɓakar halayen ƙarfe-kwayoyin halitta. Wannan kariyar ba wai kawai tana tsawaita rayuwar mai cutarwa ba amma har ma tana hana sakin nau'in carbon wanda zai iya gurɓata haɓakar yadudduka na epitaxial ko lalata ingantaccen haske a cikin kwakwalwan LED da aka gama. Sakamakon shine yanayi mai tsabta mai tsabta, rage mitar kulawa, da ingantaccen tsarin aiki na dogon lokaci.

Haka kuma, madaidaicin saman mai wanda ake zargi da daidaiton geometric suna taka muhimmiyar rawa wajen kiyaye daidaiton kwararar iskar gas da kuma rarrabawar madaidaicin a cikin ɗakin MOCVD. Ko da rarrabuwar kawuna a cikin tsari ko rubutu na rubutu na iya haifar da bambance-bambancen layin iyaka da kaurin fim ɗin da ba a haɗa su ba. Ta hanyar yin amfani da rufin mallakar Semixlab da fasahar karewa ta sama, kowane mai cutarwa yana samun keɓancewar daidaitawa da daidaitawa, yana tabbatar da haɓakar iskar gas iri ɗaya, mafi kyawun halayen halayen halayen fim ɗin epitaxial.

A zahiri, Semixlab SiC Coated Graphite Susceptor yana aiki azaman mai daidaita yanayin zafi da garkuwar gurɓatawa, yana tasiri kai tsaye ga yawan LED da ingancin kayan. Ƙirar da ta ci gaba da ƙira da fasaha na sutura suna ƙarfafa masana'antun semiconductor don cimma mafi girma yawan aiki, ingantacciyar hanyar sake fasalin tsari, da ƙananan farashin mallaka a cikin layin samar da MOCVD na zamani.

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