Mai ɗaukar Wafer Mai Rufi na CVD SiC

A aikace, mai ɗaukar wafer mai rufi na Semixlab CVD SiC yana aiki a matsayin dandamali mai karko, mai sanin gurɓatawa ga wafers yayin haɓakar epitaxial, CVD, PVD, da makamantansu. Yana taimakawa wajen kiyaye yanayin zafin jiki iri ɗaya a kan wafer ɗin, yana rage haɗarin gurɓatar ƙwayoyin cuta, kuma yana tsawaita rayuwar da za a iya amfani da ita ko da a cikin yanayin reactor mai ƙarfi.

A wani Glance

Sunan Samfura: Mai ɗaukar wafer mai rufi da CVD SiC

Haka kuma ana kiransa da: Mai ɗaukar wafer mai rufi da SiC, mai ɗaukar wafer mai epitaxy, mai riƙe wafer mai rufi da graphite, mai ɗaukar wafer mai rufi da SiC, mai ɗaukar wafer mai semiconductor

Tushe kayan: Babban tsarkin isostatic graphite tare da murfin CVD SiC

Yanayin zafin aiki: 1000 °C - 1600 °C

Aikace-aikacen farko: SiC epitaxy, GaN MOCVD, silicon epitaxy, CVD/PVD processes, janar semiconductor kayan aiki

Mabuɗin Halaye

● Rufin CVD SiC – An ajiye murfin a matsayin wani yanki mai kauri, mai tsarki sosai wanda ke rufe substrate na graphite yadda ya kamata. Yana tsayayya da harin sinadarai kuma yana rage zubar da ƙwayoyin cuta yayin zagayowar zafi.

● Kwanciyar hankali mai zafi sosai - Mai ɗaukar kaya yana riƙe da daidaiton girmansa da halayen injinsa a yanayin zafi sama da 1400 °C, wanda yake da mahimmanci don gudanar da ayyukan epitaxial akai-akai.

● Tsabtace saman - Tare da matakan ƙazanta a cikin kewayon sassan-daga biliyan, saman SiC yana rage haɗarin shan ƙwayoyi ko gurɓatawa ba tare da niyya ba, yana tallafawa yawan samar da wafer mai yawa.

● Juriyar sinadarai da lalacewa - Rufin yana da kyau a kan hydrogen, ammonia, chlorides, da sauran nau'ikan halittu masu ƙarfi waɗanda aka saba gani a cikin ɗakunan reactor.

● Daidaiton yanayin zafi - Cikiyar graphite tana ba da babban ƙarfin zafi, yayin da Layer na SiC ke tabbatar da rarraba zafi daidai, yana taimakawa wajen cimma kauri iri ɗaya na fim da bayanan doping.

● Tsawon lokacin sabis - Idan aka kwatanta da madadin graphite mara komai, mai ɗaukar murfin yana ɗaukar lokaci mai tsawo, wanda ke fassara zuwa ƙarancin maye gurbin da ƙarancin farashin amfani na dogon lokaci.

Me Yasa Ya Fita

● Kayan aiki masu inganci na matakin Semiconductor

● Rufin CVD SiC mai kauri, mara ramin pinhole tare da kauri iri ɗaya

● Babban ƙarfin zafi don canja wurin zafi cikin sauri

● Kyakkyawan juriya ga iskar gas mai lalata

● Ƙarancin samar da ƙwayoyin cuta - yana taimakawa wajen tsaftace hanyoyin tsaftacewa

● Kyakkyawan juriya ga girgizar zafi

● Tsawon rayuwar aiki

● Ya dace da nau'ikan samfuran reactor iri-iri

● Ana iya samun girma na musamman akan buƙata

Game da Semixlab

Mun ƙware a fannin hanyoyin samar da rufin zamani da kuma daidaita sassan graphite don masana'antar semiconductor, lantarki mai amfani da wutar lantarki, da kuma masana'antar girma ta lu'ulu'u. Ƙarfinmu ya haɗa da:

● Ƙwarewar rufe CVD SiC a cikin gida

● Injin gyara da kammala graphite

● Kula da inganci ya dace da ƙa'idodin masana'antar semiconductor

● Tallafin injiniya na musamman - daga samfurin samfuri zuwa yawan samarwa

● Ilimi mai zurfi game da aikace-aikacen a cikin hanyoyin epitaxial

● Amintaccen sarkar samar da kayayyaki na duniya

Ko kuna haɓaka sabon tsari ko haɓaka samarwa da ake da shi, muna ba da mafita na ɗaukar wafer don inganta daidaiton tsari, rage yawan lahani, da kuma ƙara yawan amfani da kayan aikin ku.

Aikace-aikace na al'ada

SiC epitaxy - Mai ɗaukar sinadari ya dace da tsarin girma na silicon carbide, inda ba za a iya yin sulhu tsakanin yanayin zafi da kuma sarrafa gurɓatawa ba.

GaN MOCVD – Don samar da na'urorin LED da wutar lantarki, yana samar da ingantaccen aikin zafi da ingantaccen aiki a cikin yanayin da ke da wadataccen ammonia, wanda ke da tushen hydrogen.

Silicon epitaxy - Hakanan ya dace da hanyoyin adana silicon na gargajiya waɗanda ke buƙatar ingantaccen sarrafa zafin jiki da tsafta.

Kayan aikin CVD/PVD - Yana samar da wurin sanya wafer mai aminci da kuma daidaiton hulɗar zafi a cikin zagayowar ajiyar abubuwa da yawa.