Masu dumama Graphite masu rufi na SiC

Na'urar dumama SiC mai rufi da zane-zane wani abu ne mai haɗakar dumama wanda ya ƙunshi wani abu mai girman graphite mai rufi da wani yanki mai yawa na silicon carbide mai tsarki (SiC). Tushen graphite yana aiki a matsayin abin dumama mai tsari da wutar lantarki, yayin da murfin SiC ke samar da wani abu mai ƙarfi, mai jure lalacewa, da kuma mai jure gurɓatawa wanda zai iya aiki a ƙarƙashin yanayi mai tsauri na sarrafa semiconductor.

Wannan haɗin yana amfani da damar da aka samu ta hanyar amfani da fasahar graphite mai kyau wajen sarrafa zafi da kuma yadda ake sarrafa shi, yayin da yake shawo kan iyakokin da ke tattare da shi, ciki har da iskar shaka, samar da barbashi, da kuma harin sinadarai. Sakamakon haka, akwai wani abu mai ƙarfi da ke aiki a cikin dumama wanda ke kiyaye aiki mai kyau yayin da ake fuskantar yanayi mai zafi da iskar gas mai amsawa.

Kayan Aiki da Sifofin Jiki

Ana ƙayyade aikin hita mai rufi da SiC ta hanyar halayen kayan aikinta guda biyu da aka ƙera.

Graphite substrate:

Ana ƙera ɓangaren graphite daga graphite mai yawan yawa mai ƙarfin lantarki, mai ƙarfin wutar lantarki mai yawa, ƙarancin faɗaɗa zafi, da kuma ingantaccen daidaiton injina a yanayin zafi mai yawa. Waɗannan halaye suna ba wa hita damar samar da zafi da rarraba shi yadda ya kamata yayin da take kiyaye daidaiton girma yayin zagayowar zafi mai maimaitawa.

CVD SiC Coating:

Ana samar da Layer na waje ta hanyar ajiye silikon carbide mai tsafta ta amfani da Chemical Vapor Deposition (CVD). Wannan rufin mai kauri, wanda ba ya shiga cikin ruwa yana ba da juriya ta musamman ga iskar shaka, tsatsa, zaizayar ƙasa, da samar da barbashi yayin da yake aiki a matsayin shinge mai kariya tsakanin graphite substrate da yanayin aikin semiconductor.

Matsayi a cikin Masana'antar Semiconductor

A cikin masu karɓar wutar lantarki na epitaxial da tsarin girma na lu'ulu'u, na'urar hita tana samar da muhimmin ɓangare na filin zafi. Tsarinsa, yanayin watsa wutar lantarki, da halayen rarraba zafi suna ƙayyade yanayin zafi a cikin ɗakin amsawa. Rarraba zafin jiki iri ɗaya yana da mahimmanci don sarrafa kauri Layer na epitaxial, haɗakar dopant, ƙimar girma na lu'ulu'u, da daidaiton fim a cikin diamita mafi girma na wafer. Ko da ƙananan bambance-bambancen zafin jiki na iya haifar da bambance-bambance a cikin kauri Layer, lahani na lu'ulu'u, ko raguwar aikin na'urar.

Rufin SiC mai tsafta kuma yana ba da ingantaccen shingen gurɓatawa. Graphite mara nauyi zai iya yin oxidize ko sakin ƙwayoyin carbon a hankali yayin aikin zafin jiki mai tsawo, musamman a cikin yanayin da ke da alaƙa da sinadarai. Ta hanyar ware substrate na graphite daga yanayin aiki, rufin SiC yana rage samar da ƙwayoyin, yana hana gurɓatar ƙarfe, kuma yana inganta tsabtar ɗakin gabaɗaya. Wannan yana da mahimmanci musamman ga masana'antar semiconductor mai ci gaba, inda ƙayyadaddun ƙwayoyin cuta masu tsauri ke shafar yawan samarwa kai tsaye.

Dorewa a sinadarai wata muhimmiyar fa'ida ce. Tsarin semiconductor sau da yawa yana ƙunshe da iskar gas mai ƙarfi kamar hydrogen, ammonia, hydrogen chloride, silane, da sauran sinadarai masu mahimmanci. Rufin CVD SiC mai yawa yana nuna kyakkyawan juriya ga waɗannan muhallin da ke lalata abubuwa, yana bawa hita damar kiyaye daidaiton tsari da aiki mai ɗorewa a duk tsawon lokacin samarwa.