Sassan graphite na halfmoon mai rufi na SiC

Sassan graphite na halfmoon da aka rufe da SiC sune muhimman sassa da ake amfani da su sosai a cikin tsarin epitaxy na silicon epitaxy da silicon carbide (SiC). A cikin masu samar da wutar lantarki na epitaxial, waɗannan sassan suna aiki azaman tsarin tsari, siffanta kwararar iskar gas, da abubuwan kariya, suna shafar daidaiton fim kai tsaye, halayen gefen, da kwanciyar hankali na tsari na dogon lokaci. Daidaitaccen sarrafa zafi, kwanciyar hankali na sinadarai, da gurɓataccen gurɓataccen abu suna da mahimmanci don aikin na'ura da yawan amfanin masana'antu, wanda hakan ya sa su zama mahimman sassan graphite a cikin tsarin epitaxial na semiconductor.

A cikin tsarin epitaxy na silicon da silicon carbide, sassan graphite masu siffar crescent galibi ana sanya su kusa da yankunan substrate ko gefen wafer, inda yanayin kwararar iskar gas da yanayin zafin jiki suka fi dacewa. An ƙera tsarin crescent musamman don inganta rarrabawar iskar gas ta gida da daidaiton zafi, ta haka yana rage tasirin gefen da zai iya haifar da bambancin kauri na Layer epitaxial, canjin yawan shan ƙwayoyi, ko lahani na lu'ulu'u.

Daga mahangar abubuwan da aka haɗa, ɓangaren graphite yana ba da kyakkyawan yanayin zafi da kuma iya sarrafa shi, wanda ke ba da damar ƙera siffofi masu rikitarwa don daidaita takamaiman ƙirar reactor. Don tabbatar da dacewa da yanayin epitaxial mai lalata, an lulluɓe saman graphite da wani yanki mai yawa na silicon carbide mai tsarki (SiC). Wannan murfin SiC yana aiki azaman shinge mara aiki a cikin sinadarai, yana nuna juriya mai ƙarfi ga gurɓatawa daga hydrogen, HCl, da iskar gas mai tushen silicon waɗanda aka saba amfani da su a cikin ayyukan epitaxial. Saboda haka, ɓangaren yana kiyaye daidaiton tsari da kwanciyar hankali a saman yayin aiki mai tsawo na zafin jiki (yawanci ya wuce 1500°C a cikin SiC epitaxy).

Daga mahangar sarrafa gurɓatawa, sassan graphite na halfmoon da aka shafa na SiC suna taka muhimmiyar rawa wajen kiyaye muhallin tsari mai tsafta. Rufin SiC yana hana samar da barbashi na graphite yadda ya kamata kuma yana hana fitarwa ko shaye-shayen ƙazanta na ƙarfe, yana taimaka wa masana'anta su cika ƙa'idodin barbashi da tsarki. Wannan yana da matuƙar muhimmanci musamman a cikin SiC epitaxy, inda har ma gurɓataccen abu ke lalata ingancin lu'ulu'u na epitaxial.

Idan aka kwatanta da graphite mara rufi ko wasu kayan aiki, sassan graphite rabin-wata mai rufi da SiC suna samun daidaito mafi kyau tsakanin dorewa, aikin zafi, da ingancin farashi. Tsawon rayuwar sabis ɗinsu yana rage yawan kulawa da lokacin hutun ɗaki, yayin da halayen saman da ke da karko ke ba da gudummawa ga daidaiton aiki-zuwa-baki. Waɗannan fa'idodin sun sanya su zama abubuwan da ba makawa a cikin layukan samar da epitaxial na Si/SiC mai girma.

A matsayinmu na babban mai kera kayan aikin epitaxial na semiconductor na kasar Sin kuma mai samar da kayan aikin epitaxial na semiconductor, Semixlab yana ci gaba da ba da shawarwari na fasaha da mafita na musamman ga abokan cinikin masana'antu. Muna ba wa masana'antun semiconductor damar samun mafi yawan amfanin ƙasa, haɓaka maimaita aiki, da kuma tsawaita ingancin kayan aiki a duk lokacin ci gaban epitaxial. Muna fatan zama abokin hulɗarku na dogon lokaci a China.