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Silinda Mai Zane-zanen CVD SiC
Silinda Mai Zane-zanen CVD SiC Graphite wani bangare ne mai aiki sosai wanda aka tsara don tsarin epitaxy da kuma tsarin deposition na tururin sinadarai (CVD). An gina bangaren ta amfani da wani babban nau'in isostatic graphite wanda aka haɗa shi da wani nau'in silicon carbide mai yawa na Chemical Vapor Deposition (CVD), wanda ke samar da kyakkyawan kwanciyar hankali na zafi, juriya ga tsatsa, da kuma dorewar tsari a yanayin sarrafa zafin jiki mai zafi. Ana amfani da Silinda Mai Zane-zanen Semixlab CVD SiC Graphite sosai a cikin SiC epitaxy reactors, tsarin silicon epitaxy, kayan aikin GaN MOCVD, da kuma tsarin deposition na CVD na zamani, suna samar da ingantaccen aiki ga hanyoyin ƙera semiconductor masu wahala. Ina fatan za ku ji daɗin tambayar ku.
description
Silinda na graphite na CVD SiC suna aiki a matsayin muhimman abubuwan gina jiki a cikin kayan aikin sarrafa semiconductor mai zafi, gami da masu karɓar epitaxial da tsarin adana tururin sinadarai (CVD). Suna taka muhimmiyar rawa wajen kiyaye yanayin amsawa mai dorewa, jagorantar kwararar iskar gas, da kuma kare sassan masu karɓar reactor na ciki yayin ci gaban ayyukan kera semiconductor.
Ana yin wannan bangaren ne ta amfani da wani abu mai girman gaske mai suna isostatic graphite substrate tare da wani abu mai kauri na silicon carbide (SiC) na silicon deposition chemical tururi deposition (CVD). Graphite substrate yana samar da kyakkyawan yanayin zafi, ƙarfin tsari, da kuma iya aiki da injin, yayin da SiC shafi ke samar da wani wuri mai tsafta, mai kariya daga sinadarai.
Ana amfani da silinda na graphite na Semixlab CVD SiC sosai a cikin tsarin epitaxy na SiC, masu haɗa silinda na silicon, kayan aikin GaN MOCVD, da sauran masu haɗa silinda na CVD masu zafi. A cikin waɗannan aikace-aikacen, kwanciyar hankali mai zafi, juriya ga tsatsa, da kuma kula da gurɓatawa suna da mahimmanci don kiyaye aikin aiki mai dorewa.
Matsayin da ke cikin Semiconductor Epitaxy da CVD Reactors
Daidaita Muhalli na Amsawa
A cikin na'urorin reactors na epitaxy da CVD, yawanci ana sanya silinda na graphite a kusa ko kusa da haɗuwar tushe ko wafer carrier, wanda ke zama wani ɓangare na tsarin yankin amsawar ciki. Kasancewarsu yana taimakawa wajen ayyana yanayin sararin amsawar kuma yana tabbatar da daidaiton matsayin sassan aiki masu mahimmanci.
Ta hanyar kiyaye daidaiton tsarin ɗakin yayin aiki mai zafi, silinda na graphite suna sauƙaƙa rarraba yanayin zafin jiki mai ɗorewa da yanayin amsawa - wanda ke da mahimmanci don cimma ci gaban fim iri ɗaya akan wafers.
Inganta Gudun Iskar Gas na Tsarin Aiki
Daidaiton sarrafa kwararar iskar gas yana da matuƙar muhimmanci a cikin tsarin tattara bayanai na semiconductor. Tsarin silinda yana jagorantar kwararar iskar gas ta yankin amsawa, yana rage hayaniya da haɓaka rarrabawar iskar gas iri ɗaya.
Wannan yanayin kwararar ruwa mai sarrafawa yana haɓaka daidaiton tsari kuma yana tallafawa ajiyar kayan abu iri ɗaya - musamman mahimmanci a cikin hanyoyin girma na epitaxial waɗanda ke buƙatar kauri mai ƙarfi da kuma kula da daidaiton doping.
Kare Abubuwan Reactor
A lokacin sarrafa yanayin zafi mai yawa, iskar gas mai amsawa da samfuran da aka adana na iya yin aiki tare da saman reactor. Silinda na graphite suna aiki azaman shinge na tsari mai kariya, suna kare abubuwan haɗin reactor masu mahimmanci daga fallasa kai tsaye ga yanayin aikin lalata. Wannan aikin kariya yana taimakawa rage haɗarin gurɓatawa da haɓaka amincin tsarin ajiya gaba ɗaya.
bayani dalla-dalla
| Asalin kaddarorin jiki na CVD SiC shafi | |
| Property | hankula Darajar |
| Tsarin Crystal | FCC β lokaci polycrystalline, yafi (111) daidaitacce |
| yawa | 3.21g/cm³ |
| Taurin | 2500 Vickers taurin (500g kaya) |
| Girma Girma | 2 ~ 10μm |
| Tsarkin Chemical | 99.99995% |
| Ƙarfin Zafi | 640kg-1·K-1 |
| Zazzabi Sublimation | 2700 ℃ |
| Lexarfin lexarfafawa | 415 MPa RT 4-point |
| Modul na Young | 430 Gpa 4pt lankwasa, 1300 ℃ |
| Thermal Conductivity | 300W·m-1·K-1 |
| Fadada thermal (CTE) | 4.5 × 10-6K-1 |
Aikace-aikace
Aikace-aikacen Tsarin Semiconductor na yau da kullun
Ana amfani da silinda na Semixlab CVD SiC graphite sosai a cikin hanyoyin kera semiconductor daban-daban.
SiC Epitaxy don Na'urorin Semiconductor Mai Wuta
A cikin na'urorin haɗa sinadarai na silicon carbide, yanayin zafi na girma yawanci ya wuce 1500°C, kuma yanayin sarrafawa na iya ƙunsar iskar hydrogen da chlorine. A ƙarƙashin waɗannan yanayi masu tsauri, sassan na'urorin haɗa sinadarai dole ne su nuna kwanciyar hankali na zafi da sinadarai na musamman.
Silinda na graphite na CVD SiC suna taimakawa wajen kiyaye yanayin amsawa mai kyau da kuma tallafawa ci gaban Layer epitaxial iri ɗaya a cikin kera na'urorin wutar lantarki na SiC.
Silicon Epitaxy
A cikin hanyoyin silicon epitaxy don na'urorin dabaru da wutar lantarki na zamani, sassan reactor dole ne su kiyaye tsayayyen daidaiton girma don tabbatar da daidaiton rarraba iskar gas da kuma sarrafa zafin jiki. Silinda na graphite suna ba da gudummawa ga daidaiton tsarin ɗakin ciki, don haka suna tallafawa ajiyar Layer na silicon epitaxial iri ɗaya akan wafers.
Tsarin MOCVD don GaN da LEDs
A fannin kera gallium nitride da LED, na'urorin reactors na MOCVD suna aiki a yanayin zafi mai yawa ta amfani da iskar gas mai saurin amsawa kamar ammonia da mahaɗan ƙarfe na halitta. Silinda na gas na CVD SiC graphite suna taimakawa wajen daidaita tsarin reactors da kuma jagorantar iskar gas mai sarrafawa, suna haɓaka daidaiton ajiya da kuma amincin kayan aiki na dogon lokaci.
Tsarin Canja wurin CVD Mai Zafi Mai Tsayi
A cikin tsarin adana bayanai daban-daban da ke tushen CVD—kamar na polysilicon, silicon carbide, ko wasu kayan aiki na zamani—silinda na gas na graphite suna tallafawa aikin reactor mai ƙarfi da rage haɗarin gurɓatawa.
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