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CVD Tantalum Carbide (TaC) Rufi

CVD Tantalum Carbide (TaC) Rufi

Gida > Kayayyaki > Rufin CVD > Rufin CVD Tantalum Carbide (TaC)

Zoben TaC mai ƙarfi
Zoben TaC mai ƙarfi
Zoben TaC mai ƙarfi
Zoben TaC mai ƙarfi

Zoben TaC mai ƙarfi


Place na Origin: Sin
Brand Name: Semixlab
Model Number: Saukewa: PTCR-001
Certification: ISO9001
Yawancin Maɗaukaki Mafi Girma: 1 sa
Price: Tuntuɓi don Ƙididdigar Musamman
Marufi Details: Daidaitaccen fakitin fitarwa
Bayarwa Lokaci: Lokacin Bayarwa: Kwanaki 45-50 Bayan Tabbatar da Oda
Biyan Terms: T / T
Supply Ability: saiti 200/wata
description

Silicon carbide (SiC), abu na uku na semiconductor abu, yana da kyawawan kaddarorin kamar babban bandgap, babban yanayin zafi, da babban filin lantarki, yana mai da shi mahimmanci a fannoni kamar sabbin motocin makamashi, jigilar jirgin ƙasa, sadarwar 5G, da lantarki. Haɓaka lu'ulu'u guda ɗaya na SiC yana buƙatar yanayin zafi sosai (> 2000 ° C) da matsananciyar yanayi na zahiri da sinadarai, yana sanya babban buƙatu akan mahimman abubuwan haɓaka kayan aikin haɓaka, kamar crucibles da abubuwan filin thermal. Semixlab yana ba da zoben Tantalum carbide (TaC), tare da keɓaɓɓen kayan aikinsu na zahiri da na sinadarai, sun zama ingantaccen abu don haɓaka aikin haɓakar ci gaban SiC guda lu'ulu'u.

Mahimman halaye na zoben tantalum carbide porous

1. Babban kwanciyar hankali

Tantalum carbide narkewa batu har zuwa 3880 ℃, a cikin silicon carbide guda crystal girma zazzabi kewayon (2000-2500 ℃) don kula da tsarin kwanciyar hankali, kauce wa nakasawa ko volatilization.

Low thermal fadada coefficient (6.3×10⁻⁶/K), rage hadarin fasa da zafi zafi lalacewa ta hanyar.

2. Sinadarin rashin kuzari

Yana da ƙarfi mai ƙarfi tare da silicon carbide, graphite da sauran kayan, kuma baya amsawa da silicon (Si) da carbon (C) tururi a babban zafin jiki don guje wa gurɓataccen lu'ulu'u.Kyakkyawan juriya ga siliki/carbon gas.

Ƙarin Bayanan:

1. Wasu sunaye: Zoben TaC mai ƙarfi, Tantalum carbide mai ƙarfi, zobe mai rufi TaC

2. Aikace-aikace: Kamar yadda core bangaren na thermal filin tsarin, porous TaC zobe regulates zafi radiation rarraba ta hanyar da porous tsarin, rage radial zafin jiki gradient, da kuma inganta axial girma uniformity na silicon carbide guda crystal.Combined tare da graphite hita, da crystal danniya lahani lalacewa ta hanyar gida overheating za a iya rage.

3. Core sigogi: Tantalum carbide narkewa batu har zuwa 3880 ℃, a cikin silicon carbide guda crystal girma zazzabi kewayon (2000-2500 ℃) don kula da tsarin kwanciyar hankali, kauce wa nakasawa ko volatilization.

Low thermal fadada coefficient (6.3×10⁻⁶/K), rage hadarin fasa da zafi zafi lalacewa ta hanyar.

Aikace-aikace

Makullin aikace-aikacen a cikin haɓakar siliki carbide guda crystal

1. Tsarin filin thermal da sarrafa zafin jiki

A matsayin ginshiƙi na tsarin filin thermal, zoben TaC mai ƙyalƙyali yana daidaita rarraba hasken zafi ta hanyar tsarin sa mai ƙarfi, yana rage radial zazzabi gradient, kuma yana haɓaka daidaituwar haɓakar axial na crystal.

Haɗe tare da faifan faifan hoto, ana iya rage lahanin damuwa na kristal da zafi na gida ya haifar.

2. jigilar iskar gas da haɓaka amsawa

A cikin tanderun girma na PVT, za'a iya amfani da zoben TaC mai ƙyalƙyali azaman matsakaiciyar watsa iskar gas don rarraba tururin Si/C daidai zuwa saman kristal iri, wanda zai iya haɓaka ƙimar girma na crystal da ingancin crystal.

Tsarin pore na iya ƙaddamar da gurɓataccen abu (kamar ions ƙarfe) kuma yana inganta tsabtar kristal (resistivity> 10⁵ Ω·cm).

3. Taron tallafi na tsawon rai

Maimakon kayan aikin graphite na gargajiya, ana amfani da shi don zoben tallafi na crucible ko yadudduka masu zafi don guje wa matsalar graphite foda a yanayin zafi mai zafi da tsawaita rayuwar sabis na kayan aiki (> 1000 hours).

Tsarin porous yana sauƙaƙa ƙaddamar da damuwa na thermal kuma yana rage haɗarin fashewa.

Ana amfani da zoben TaC galibi a hanyar PVT

A taƙaice, Semixlab's Porous TaC Ring yana haɓaka ingancin lu'ulu'u: filin zafi iri ɗaya yana rage ƙarancin lahani kuma yana goyan bayan shirya manyan girman SiC lu'ulu'u ɗaya na inci 6 da sama.

Haɓaka ingantaccen tsari: Haɓaka ingantaccen watsa iskar gas da haɓaka ƙimar girma da 10-15%.

Rage farashin samarwa: Abubuwan da suka shafi rayuwa na tsawon lokaci suna rage yawan kula da kayan aiki, kuma an rage farashin gabaɗaya da 20-30%.

Amfanin da ya dace

Amfanin tsarin porous

Porosity mai sarrafawa (30-60%) yana haɓaka hanyar watsa iskar gas kuma yana haɓaka jigilar tururin Si/C iri ɗaya a cikin PVT (hanyar jigilar tururin jiki).

Babban yanki na musamman yana haɓaka ingantaccen radiation na thermal, yana taimakawa wajen samar da filin zafin jiki iri ɗaya, kuma yana hana lahani na crystal (kamar microtubules da dislocations).

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