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Murfin TaC mai Rufi na Tantalum Carbide
Murfin Tantalum Carbide (TaC) mai rufi daga Semixlab an ƙera shi ne don tabbatar da kwanciyar hankali da tsafta a cikin yanayin epitaxy na semiconductor. An ƙera shi musamman don dandamalin reactor na epitaxial na Si, SiC, da GaN, saman da aka rufe da TaC yana jure yanayin zafi mai tsanani da yanayin sinadarai masu ƙarfi, yana rage samar da barbashi da zaizayar ɗaki. Ta hanyar kiyaye saman iyaka mai ƙarfi da rage wuraren gurɓatawa, wannan murfin yana tallafawa daidaiton ingancin Layer na epitaxial, tsawaita lokacin aiki na kayan aiki, da ingantaccen yawan wafer a duk faɗin samar da semiconductor mai girma. Muna maraba da tambayar ku.
description
A matsayinta na babbar masana'antar murfin Tantalum Carbide (TaC) ta ƙasar Sin, an tsara faranti na murfin TaC mai rufi na Semixlab don yanayin ci gaban epitaxial na semiconductor mai ci gaba. A cikin waɗannan muhallin, zafin jiki, kwanciyar hankali na sinadarai, da kuma kula da gurɓatawa sune muhimman abubuwan da ke ƙayyade yawan amfanin na'urar. Waɗannan murfin an tsara su musamman don masu haɗakar sinadari na Si, SiC, da GaN, suna aiki a matsayin muhimmin Layer na rufewa da kariya a cikin ɗakin amsawa, suna kare saman ciki daga tsatsa da gurɓataccen ƙwayoyin cuta.
Girman epitaxial na Semiconductor, kamar Si/SiC/GaN epitaxy, yana buƙatar ƙirƙirar siraran fim marasa lahani a ƙarƙashin yanayin aiki mai matuƙar wahala. Iskar hydrogen, iskar gas mai tushen chlorine, ammonia, da hydrocarbon suna ci gaba da amsawa a cikin ɗakuna a yanayin zafi wanda yawanci ya wuce 1500°C. Rufin ɗakin gargajiya yana raguwa da sauri a ƙarƙashin wannan matsin lamba na sinadarai da zafi, wanda ke haifar da zubar da ƙwayoyin cuta, gurɓatar ƙarfe, da kuma taƙaita tazara na kulawa. Rufin mu mai rufi na TaC, tare da wurin narkewa mai matuƙar zafi (kimanin 3880°C), juriya mai kyau ga plasma da sinadarai, da tsarin rufin da ke da yawa, mai ƙarancin porosity, yana danne ragowar amsawar saman yadda ya kamata. Wannan yana tabbatar da tsaftar cikin ɗakin, yana rage hanyoyin samar da lahani kamar barbashi, ramin saman, da kuma tara faɗuwar lahani akan wafer.
A cikin masu aikin reactors na epitaxial, daidaiton zafi da daidaiton kwararar iskar gas sune ginshiƙai ga daidaiton wafer-zuwa-wafer. Ta hanyar kiyaye daidaiton tsari da saman iyakoki marasa amsawa, murfin da aka rufe da TaC yana taimakawa wajen kiyaye daidaiton ɗakin da daidaiton zafi, yana tabbatar da daidaiton Layer na epitaxial iri ɗaya da haɗa dopant a cikin wafers da yawa. Ta hanyar rage gurɓatawa da tsawaita rayuwar sabis, masana'antun na iya samun fa'idodi masu mahimmanci: rage lokacin aiki, ƙarancin jimlar farashin mallaka, ingantaccen lokacin aiki na kayan aiki, da kuma ƙara tsaurara sarrafa tsari.
Ana ƙera murfin TaC mai rufi na Semixlab ta amfani da fasahar adana murfin CVD Tantalum Carbide, kula da mannewa na ƙananan tsari, da kuma daidaiton tsarin aiki don tabbatar da ingancin murfin, daidaiton kauri, da juriya ga girgizar zafi. Ana iya tsara murfin kariya ta musamman don tanderu, MOCVD, LPCVD, da dandamalin epitaxial na SiC/Si na tsaye. Muna fatan zama abokin hulɗarku na dogon lokaci a China.
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