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TaC Planetary Epi Susceptor
| Place na Origin: | Sin |
| Brand Name: | Semixlab |
| Model Number: | Farashin TPES0001 |
| Certification: | ISO 9001 |
| Yawancin Maɗaukaki Mafi Girma: | 1pc |
| Price: | musamman |
| Marufi Details: | Daidaitaccen akwatin fitarwa |
| Bayarwa Lokaci: | 30-45days |
| Biyan Terms: | Don yin sulhu |
| Supply Ability: | 200pcs kowace wata |
description
Aixtron planetary faifai wani maɓalli ne mai ɗaukar nauyi a cikin kayan aikin ƙarfe-kwayoyin tururi (MOCVD), galibi ana amfani da su a cikin haɓakar aikin silicon carbide (SiC) zanen gadon epitaxial. Babban tsarin sa yana ɗaukar ƙirar ƙira na kayan graphite mai tsabta mai tsabta + tantalum carbide (TaC).
Ƙarin Bayanan:
1. Wasu sunaye: Aixtron planetary disk,TaC mai rufin duniya susceptor,SiC Epi susceptor ga Aixtron reactor
2. Aikace-aikace: Don babban aikin silicon carbide (SiC), gallium nitride (GaN) da sauran ƙarni na uku semiconductor epitaxial tsari.
3. Mahimman sigogi:
Tsarin ya tsaya tsayin daka a 2000 ℃ don guje wa gurɓataccen gurɓataccen abu na ɗakin amsawa.
Ingantacciyar juriya ga yashewar iskar gas kamar SiH₄ da HCl. Yana rage lahani a kan ma'auni.
Ƙarƙashin zafin jiki na graphite + TaC composite structure yana kusa da na SiC wafer (SiC: 490 W / m·K), yana rage ɓarnawar lattice da ke haifar da damuwa na thermal.
Ƙaƙƙarfan launi na TaC shafi shine <1μm, wanda zai iya hana faɗuwar ƙananan ƙwayoyin cuta da kuma tabbatar da ingancin farfajiyar epitaxial Layer (launi mai yawa <0.5/cm²).
Siffar samfurin
Aixtron planetary faifai wani maɓalli ne mai ɗaukar nauyi a cikin kayan aikin ƙarfe-kwayoyin tururi (MOCVD), galibi ana amfani da su a cikin haɓakar aikin silicon carbide (SiC) zanen gadon epitaxial. Babban tsarin sa yana ɗaukar ƙirar ƙira na kayan graphite mai tsabta mai tsabta + tantalum carbide (TaC) shafi:
Graphite substrate: samar da kyau kwarai thermal watsin (~ 130 W / m · K) da kuma high zafin jiki kwanciyar hankali (zazzabi> 2000 ℃) don tabbatar da uniform thermal filin rarraba a dauki jam'iyya.
Tantalum carbide shafi: graphite surface an rufe shi da wani sinadaran tururi jijiya (CVD) ko sintered tsari, yawanci 30-100um lokacin farin ciki, don samar da wani m sinadaran shãmaki.
The zane da aka gyara domin high zafin jiki (1500-1700 ℃), sosai m (silane, HCl da sauran gas) yanayi na SiC epitaxial girma, muhimmanci inganta tsari kwanciyar hankali da wafer yawan amfanin ƙasa.
Tantalum carbide (TaC) da silicon carbide (SiC) kwatankwacin aikin shafi
| Kayan shafawa | Tantalum carbide (TaC) shafi | Silicon carbide (SiC) shafi |
| narkewa batu | Matsayin narkewa 3880 ℃ (mafi girman iyakar zafin jiki) | Matsayin narkewa 2700 ℃ (mai sauƙin bazuwa a babban yanayin zafi) |
| Ƙididdigar faɗaɗawar thermal | Ƙididdigar faɗaɗawar thermal 6.3 × 10⁻⁶/K (mafi dacewa da graphite) | 4.5×10⁻⁶/K (mai sauƙin fashe saboda rashin daidaituwa na thermal) |
| Juriya ga lalata tururin silicon | Kyakkyawan juriya ga lalatar tururin silicon (ƙananan TaC da Si reactivity) | matalauta (a yanayin zafi mai girma SiC yana amsawa tare da Si don samar da lokacin Si₂C) |
| Haɗarin gurɓataccen abu | Ƙananan haɗari na gurɓataccen ƙwayar cuta (rufin mai yawa ba tare da pores ba) | Maɗaukaki (rufin da ke da kusanci ga bawon gida) |
| rayuwa | Rayuwar sabis> sa'o'i 5000 (tsawaita sake zagayowar kulawa fiye da 50%) | Game da 2000-3000 hours |
Daidaitawar samarwa
An daidaita shi zuwa Aixtron G5 WW C da dandamali na Annabi, yana iya ɗaukar wafers 6/8-inch tare da ƙarfin> 30 wafers/ tsari.
Ƙimar fasaha da mahimmancin masana'antu
Graphite + tantalum carbide mai rufaffiyar abin rufe fuska na duniya yana magance matsalar kwalabe na rufin SiC na gargajiya a cikin tsarin zafin jiki na dogon lokaci:
Haɓaka farashi: ƙaddamar da sake zagayowar maye gurbin kayan amfani da rage farashin epitaxial na yanki guda fiye da 20%;
Inganta yawan amfanin ƙasa: rage gurɓataccen ƙwayar cuta da tasirin tabo mai zafi, da haɓaka yawan amfanin ƙasa na takardar epitaxial ya wuce 95%;
Tsari faɗaɗa taga: yana goyan bayan ƙimar girma mafi girma (> 50μm/h) da yaduddukan epitaxial masu kauri.
Yayin da aka haɓaka ƙarfin SiC na duniya zuwa inci 8, wannan fasaha za ta zama hanya mai mahimmanci don karya ta cikin ƙulli na daidaiton epitaxial.
bayani dalla-dalla
| Kaddarorin jiki na rufin TaC | |
| yawa | 14.3 (g/cm³) |
| Takamammen fitarwa | 0.3 |
| Ƙididdigar faɗaɗawar thermal | 6.3 10-6/K |
| Hardness (HK) | 2000 HK da |
| Resistance | 1 × 10-5 Ohm * cm |
| Tsarin kwanciyar hankali | <2500 ℃ |
| Girman zane yana canzawa | -10-20 |
| Kauri mai rufi | ≥20um dabi'un dabi'a (35um± 10um) |
| Ƙararrawar ƙararrawa | 9-22 (W/m·K) |
| Kaddarorin jiki na graphite isostatic | ||
| Property | Unit | hankula Darajar |
| Yawan Girma | g / cm³ | 1.83 |
| Taurin | HSD | 58 |
| Tabbatar da Gaskiya | μΩ.m | 10 |
| Lexarfin lexarfafawa | MPa | 47 |
| Ƙarfin ƙarfi | MPa | 103 |
| Tensile Ƙarfin | MPa | 31 |
| Modul na Young | GPa | 11.8 |
| Fadada thermal (CTE) | 10-6K-1 | 4.6 |
| Thermal Conductivity | W·m-1·K-1 | 130 |
| Matsakaicin Girman Hatsi | μm | 8-10 |
Aikace-aikace
Silicon carbide ikon na'urar epitaxy
Ya dace da ci gaban epitaxial na 4H-SiC, wanda ake amfani dashi don kera manyan na'urorin MOSFET da IGBT sama da 1200V.
Bukatar sabbin motocin makamashi, masu juyawa na hotovoltaic, zirga-zirgar jiragen kasa da sauran filayen sun yi yawa.
Ƙarni na uku ci gaban semiconductor
Yana goyan bayan GaN-on-SiC heteroepitaxy tsari don na'urorin RF 5G da guntuwar sadarwa ta millimeter.
Amfanin da ya dace
Taƙaitaccen fa'idodi:
TaC shafi ya fi na gargajiya SiC shafi cikin sharuddan lalata juriya a high zafin jiki, thermal matching da kuma tsawon rai, musamman dace da silicon tururi wadatar yanayi a SiC epitaxial girma.
Juriya ga matsanancin zafi:
Tsarin ya tsaya tsayin daka a 2000 ℃ don guje wa gurɓataccen gurɓataccen abu na ɗakin amsawa.
Chemical juriya:
Ingantacciyar juriya ga yashewar iskar gas kamar SiH₄ da HCl. Yana rage lahani a kan ma'auni.
Daidaitaccen filin thermal:
Ƙarƙashin zafin jiki na graphite + TaC composite structure yana kusa da na SiC wafer (SiC: 490 W / m·K), yana rage ɓarnawar lattice da ke haifar da damuwa na thermal.
Ƙananan fitar da gurɓataccen gurɓataccen abu:
Ƙaƙƙarfan launi na TaC shafi shine <1μm, wanda zai iya hana faɗuwar ƙananan ƙwayoyin cuta da kuma tabbatar da ingancin farfajiyar epitaxial Layer (launi mai yawa <0.5/cm²).
