Single wafer epi graphite susceptor

ASM monolithic epitaxial tire da aka tsara don high-yi silicon carbide (SiC), gallium nitride (GaN) da sauran ƙarni na uku semiconductor epitaxial tsari, da samfurin ya hada da wani sa na graphite tire, graphite zobe da sauran na'urorin haɗi, ta yin amfani da high tsarki graphite substrate + tururi deposition silicon carbide shafi hadaddun tsarin, la'akari da sinadaran filin uniformity silicon carbide shafi kumshi tsarin, la'akari da sinadarai filin. Ita ce ainihin abin da ke ɗauke da takaddar takaddar epitaxial mai girma a cikin samar da taro.

Ƙarin Bayanan:

1. Sauran sunayen: 6 inch wafer epi susceptor, 8 inch wafer epi susceptor, graphite susceptor, guda wafer susceptor.

2. Aikace-aikace: Don babban aikin silicon carbide (SiC), gallium nitride (GaN) da sauran ƙarni na uku semiconductor epitaxial tsari.

Sabunta kayan abu: graphite + SiC shafi

Graphite

-Ultra-high thermal conductivity (> 130 W / m · K), amsa mai sauri ga bukatun kula da zafin jiki, don tabbatar da kwanciyar hankali na tsari.

- Low thermal fadada coefficient (CTE: 4.6 × 10⁻⁶ / ° C), rage yawan zafin jiki nakasawa, tsawaita rayuwar sabis.

CVD SiC shafi

-lalata juriya. Hana kai hari ta iskar gas kamar H₂, HCl, da SiH₄. Yana guje wa gurɓataccen Layer na epitaxial ta hanyar canzawa na kayan tushe.

-Surface densification: da shafi porosity ne kasa da 0.1%, wanda ya hana lamba tsakanin graphite da wafer da kuma hana yaduwar carbon impurities.

Haƙurin zafin jiki mai girma: aikin kwanciyar hankali na dogon lokaci a cikin yanayi sama da 1600 ° C, daidaitawa da buƙatun zafin jiki na SiC epitaxy.

Filin thermal da ƙirar haɓakar iska

Uniform thermal radiation tsarin

An ƙera saman mai ɗaukar hoto tare da raƙuman tunani na thermal da yawa, kuma tsarin kula da filin thermal na na'urar ASM ya sami daidaiton yanayin zafin jiki a cikin ± 1.5 ° C (wafer 6-inch, 8-inch wafer), yana tabbatar da daidaito da daidaituwa na kauri na epitaxial Layer (sauyi <3%).

Dabarar tuƙi ta iska

An ƙera ramukan karkatar da gefen gefe da ginshiƙan tallafi masu niyya don haɓaka rarraba iskar gas na laminar akan farfajiyar wafer, rage bambance-bambancen ƙimar ajiya wanda igiyoyin ruwa ke haifarwa, da haɓaka daidaituwar doping.

Daidaituwa da aminci

Daidaita yanayin yanayi da yawa

Dace da 4H-SiC, 6H-SiC homoepitaxy, da GaN-on-SiC heteroepitaxy tafiyar matakai, goyan bayan N/P nau'in doping (kamar N₂, Al doping).

Tsawon rayuwa mai tsawo

A taurin silicon carbide shafi kai 430 Gpa 4pt lankwasa, 1300 ℃, da juriya ga barbashi yashwa ne ya karu fiye da sau 3, da sabis rayuwa na guda tire ya wuce 5000 tsari hours, da kuma kudin na m consumables an rage.

Scenarios aikace-aikace

Na'urar wutar lantarki ta SiC

5G RF gaban-karshen module

Photovoltaic da tsarin ajiyar makamashi

Bayanin Bayanin Fasaha

Daidaitaccen tsari: Ta hanyar ƙirar asali na kayan aiki na ASM, lokacin daidaitawa na filin zafi da iska yana raguwa.

Alƙawarin gurɓatawar sifili: SiC coatings wuce SEMI daidaitaccen ƙazantaccen ƙarfe (Fe, Ni, da sauransu <1ppb).

Mai saurin amsawa: Tsarin tire na zamani, goyan bayan kan layi da tallafin fasaha.