CVD SiC shafi wafer susceptor

Semixlab yana mai da hankali kan haɓakawa da samar da suturar silicon carbide (SiC) mai tsafta, kuma ta himmatu wajen samar da ingantattun mafita ga masana'antar semiconductor. Ta hanyar ci-gaban fasahar tururi na sinadarai (CVD), muna ba da sabis na sutura na al'ada don masu cutar wafer don tabbatar da ingantaccen aikinsu a cikin matsanancin yanayin tsari.

Mun samar da high-tsarki β-SiC shafi (crystal fuskantarwa (111)) a kan saman high-tsarki graphite substrate ta CVD fasaha, a lokaci guda, yana da matsananci-high zazzabi juriya, lalata juriya da uniform zafi rarraba ikon. Kayayyakin da suka dace da Aixtron, Veeco da sauran kayan aikin haɓakar epitaxial na yau da kullun, ana amfani da su sosai a GaN/GaAs da sauran haɓakar epitaxial.

The substrate na CVD SiC shafi wafer da aka yi da high tsarki SGL graphite, da kuma m silicon carbide shafi ne uniformly girma a kan ta surface ta sinadaran tururi shaida (CVD) tsari. Ana yin wannan tsari a cikin ɗaki mai zafi mai zafi kuma yana tabbatar da amincin nanoscale crystalline na shafi ta hanyar sarrafa daidaitaccen ma'aunin tushen silicon (misali, methyltrichlorosilane) zuwa iskar gas na tushen carbon, gradient zafin jiki (yawanci tsakanin 1000 ° C da 1400 ℃) da ƙimar ajiya. Za'a iya daidaita kauri na murfin bisa ga buƙatun aikace-aikacen, kama daga ƴan microns zuwa dubun microns, don saduwa da buƙatun ƙarfin injina a matsanancin yanayin zafi, yayin da guje wa haɗarin tashin hankali saboda kauri mai yawa.

A cikin ci gaban epitaxial na LED, tiren wafer yana buƙatar jure yanayin zafi sama da 1600 ℃ da saurin hawan keke. Tare da ainihin babban narkewa (kimanin 2700 ℃), ƙarancin haɓakar haɓakar thermal (4.5 × 10)^-6/ K) da kuma kyakkyawan halayen thermal (~ 120 W / m · K), CVD SiC shafi na iya kula da kwanciyar hankali na geometric a ƙarƙashin matsanancin zafin jiki mai tsanani da kuma guje wa wafer warping ko micro-cracks lalacewa ta hanyar thermal stress. Bugu da ƙari, rashin ƙarancin sinadarai na SiC yana sa ya nuna juriya mai ƙarfi a cikin iskar gas (kamar HCl, H).₂) yanayi, yana rage ƙazantar ƙazanta da aka gabatar ta hanyar haɓakawa ko halayen gefe yayin aiwatarwa, don haka inganta daidaituwar layin epitaxial akan farfajiyar wafer da yawan amfanin na'urar.

Ana amfani da samfurin a ko'ina a cikin masana'antar semiconductor na ƙarni na uku, samar da guntu mai ƙarfi na LED. Misali, a cikin tsarin ƙarfe-kwayoyin tururi na sinadarai (MOCVD) don na'urorin GaN-on-SiC RF, tire na CVD SiC yana samun daidaiton yanayin zafin jiki tsakanin ± 1℃ na saman wafer ta daidai ƙirar rarraba filin thermal, yana tabbatar da cewa karkacewar kauri na epitaxial bai wuce 1%. A lokaci guda, ƙananan halayen sakin ɓangarorin sa (yawancin barbashi <0.1/cm²kamar yadda aka auna ta SEM-EDS) ya sa ya zama mai kyau a cikin mahalli mai tsabta mai tsabta, musamman dacewa ga nodes na ci gaba masu kula da lahani (kamar hanyoyin da aka taimaka don kwakwalwan kwamfuta a ƙasa 5 nm).

Idan aka kwatanta da tiren wafer na gargajiya, rayuwar sabis na CVD SiC shafi wafer hy pnotic tor za a iya tsawaita ta sau 3-5. Siffofin tsaftace kai na samansa suna rage mitar kulawa kuma, haɗe tare da fasahar sake gyara shafi na gida, rage dawowar sake zagayowar saka hannun jari da fiye da 40%. Dangane da bayanan ma'aunin masana'antu, layin samar da SiC na 6-inch ta amfani da wannan samfur na iya rage canjin tsari tsakanin batches da 15%, haɓaka ƙarfin samarwa na shekara-shekara da 20%, da rage raguwar ƙima saboda gurɓatawa zuwa ƙasa da 0.03%.

Daga binciken dakin gwaje-gwaje da haɓakawa zuwa samarwa mai girma, Semixlab's CVD SiC shafi wafer hy pnotic tor koyaushe an yi niyya ga jagoran masana'antu. Ba wai kawai tsarin da ake amfani da shi ba ne, har ma da ginshiƙi na fasaha a fagen kera madaidaicin zafin jiki. Za ta ci gaba da ba da garanti mai inganci don kera na'urori masu tsayi a cikin manyan filayen kamar sadarwar 5G, sabbin na'urorin lantarki na makamashi, da ƙididdigar ƙididdiga.

Taimakon Wafer da Canja wurin zafi a cikin tsarin MOCVD, gami da shuɗi da kore LED, UV LED da zurfin-UV LED da dai sauransu, wanda aka daidaita da kayan aiki daga LPE, Aixtron, Veeco, Nuflare, TEL, ASM, Annealsys, TSI da sauransu.

Fasahar jagora: Tsarin CVD don cimma (111) daidaitawa β-SiC, girman hatsi 2-10μm, tsari mai yawa.

Matsanancin yanayi karbuwa: high zafin jiki hadawan abu da iskar shaka juriya, plasma yashwar juriya, ash <5ppm.

Kyakkyawan kula da thermal: Ƙarƙashin zafin jiki na 300W/m · K, CTE daidai yayi daidai da graphite don guje wa fashewar damuwa na thermal.

Cikakkun sabis na tsari: Goyan bayan sarrafa substrate, sakawa mai sutura, gwada isar da tasha ɗaya.