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Porous yumbura Vacuum chuck
Ƙarin Bayanan:
1. Sauran sunaye: Porous yumbura Vacuum chuck, Porous SiC chuck, porous chuck.
2. Aikace-aikacen: Na'urar tallan kayan aiki mai mahimmanci wanda aka tsara don daidaitaccen adsorption da gyaran gyare-gyare na wafers da ingots, dace da masana'anta na semiconductor, yankan wafer, machining machining, high zazzabi epitaxy, etching, ion implantation da sauran al'amura.
3. Mahimman sigogi:
Matsakaicin daidaitacce (10-200μm).
Ultra-high zafin jiki (≤1600°C), kyakkyawan juriya na zafin zafi.
Vacuum adsorption: daidaitaccen -90kPa (ana iya daidaita shi zuwa 100kPa).
Girman kofin tsotsa: Goyan bayan 4/6/8/12 inch wafers, girman ingot za a iya musamman.
description
Ceramic vacuum chuck shine na'urar tallan kayan aiki mai girma wanda aka ƙera don daidaitaccen talla da gyaran wafers da ingots. Yana ɗaukar tsari mai haɗaka na yumbu mai yumbu + ƙarfe na waje, haɗe tare da ƙira na musamman na tashoshi na iska da pores don cimma daidaitattun rarraba ƙarfi da ƙarfi da kwanciyar hankali. Ya dace da masana'anta na semiconductor, yankan wafer, mashin daidaitaccen mashin da sauran al'amuran, goyan bayan babban zafin jiki, yanayin motsi mai girma, na iya saduwa da buƙatun dacewa na nau'ikan wafers / ingot.
Sabis na musamman
Girma da gyare-gyaren kaya
Stomata da inganta hanyar iska
Daidaita yanayi na musamman
Misalin ƙira
Aikace-aikace
Ƙirƙirar Semiconductor
Ci gaban Epitaxial: Tsayayyen adsorption na wafers na SiC a yanayin zafi mai zafi don gujewa warping da gurɓatawa.
Lithography da etching: Madaidaicin matsayi a cikin babban dandamali mai motsi (hanzari ≤10G) don tabbatar da daidaiton jigilar hoto.
Ingot sarrafa
Yanke da niƙa: Adsorption na ingot mai nauyi (kamar sapphire, silicon carbide ingot) don murkushe fashewar gefen da girgiza ta haifar.
Binciken kimiyya da fasaha na musamman
Babban zafin jiki annealing: Silicon carbide tsotsa kofuna na aiki na dogon lokaci a 1600 ° C, ba tare da nakasawa da kuma huta gurbatawa.
Vacuum shafi: Babban ƙirar iska mai ƙarfi, mai jituwa tare da yanayin rami na PVD/CVD.
Amfanin da ya dace
Tsarin mahimmanci da fa'idodin kayan aiki
1.Multilayer composite design
Layer Layer: Porous yumbu (na zaɓi silicon carbide ko porous graphite), budewa daidaitacce (10-200μm) don tabbatar da uniform canja wurin adsorption ƙarfi zuwa wafer surface don kauce wa gida danniya taro.
Matrix: Babban firam ɗin ƙarfe mai ƙarfi (bakin ƙarfe ko aluminium alloy) don ba da tallafi na tsari da ƙarancin iska.
Hanyar iska da pores: Cibiyar sadarwa ta ciki na daidaitattun hanyoyin iska da aka rarraba a ko'ina suna goyan bayan cirewar injin da sauri (ƙarfin adsorption har zuwa -90kPa) da saki nan take.
2. Kwatanta kayan abu
| Material | Silikon carbide mai ƙarfi | Grafite mai ƙarfi |
| Taimako mai zafi | Ultra-high zafin jiki (≤1600°C), kyakkyawan juriya na zafin zafi | Matsakaici high zafin jiki (≤800°C), mafi kyau thermal conductivity |
| Karuwar sinadarai | Acid da alkali juriya lalata, juriya lalata plasma | Mai jure wa iskar gas mara oxidizing, ƙananan farashi |
| Yanayin da ya dace | Babban zafin jiki epitaxy, etching, ion implantation | Yanke wafer, niƙa, marufi |
3. Maɓalli mai mahimmanci da sigogi na fasaha
| description | ra'ayi |
| Girman Chuck | Taimaka wa 4/6/8/12 inch wafers, girman ingot za a iya musamman |
| loading | Single farantin matsakaicin nauyi 50kg (tsawo ≤300mm) |
| aiki Temperatuur | Silikon carbide mai ƙarfi: -50°C ~ 1600°C; Grafite mai ƙarfi: -50°C ~ 800°C |
| Vacuum adsorption | Daidaitaccen -90kPa (wanda aka saba dashi zuwa -100kPa) |
FAQ
Q: Yadda za a zabi m silicon carbide da porous graphite chuck? Menene babban bambance-bambance tsakanin silicon carbide porous da porous graphite chuck a high-zazzabi matakai? Yadda za a zabi kayan da ya dace don yanayin aikace-aikacen?
A: Silicon carbide chuck mai ƙarfi:
Juriya na zafin jiki: na iya yin aiki a tsaye a matsanancin yanayin zafi ≤1600 ° C (kamar SiC epitaxy, haɓakar zafin jiki mai girma), kyakkyawan juriya na zafin zafi, wanda ya dace da yanayin canjin zafin jiki mai ƙarfi.
Juriya na lalata: tsayayya da acid mai ƙarfi, alkali da yashwar plasma, dace da etching, ion implantation da sauran lalata gas tsari.
Chuck graphite mai ƙarfi:
A halin da aka Halaka: Sama da Tsarin Helikal (200-400 W / Mİ.)
Tattalin Arziki: Ƙananan farashi, dace da ≤800 ° C matsakaicin yanayin zafi (kamar marufi, niƙa).
Shawarwari na zaɓi:
Idan tsarin zafin jiki ya kasance> 800 ° C ko ana buƙatar juriya na lalata, an fi son siliki carbide mara kyau; Idan bin farashi-tasiri da ƙananan zafin jiki, na iya zaɓar graphite mai ƙarfi.
