Chuck ɗin wafer mai rufi na TaC

Kayan aikin wafer mai rufi na TaC na Semixlab suna aiki a matsayin muhimman abubuwan riƙe wafer don hanyoyin girma na epitaxial silicon carbide (SiC), inda nasarar ta dogara ne akan juriya ga yanayin zafi mai tsanani, muhallin sinadarai masu lalata, da juriya ga tsari mai tsauri. An ƙera su don dorewa, tsabta, da kuma sake maimaita aiki, masu riƙe wafer mai rufi na TaC na Semixlab suna tallafawa kera SiC mai yawan amfani ta hanyar haɓaka daidaiton epitaxial, faɗaɗa tazara na kulawa, da ƙara lokacin aiki na kayan aiki a cikin yanayin samarwa mai yawa.

An gina shi daga babban sinadarin graphite mai tsabta kuma an yi masa injin daidai don tabbatar da lanƙwasa, daidaito, da kwanciyar hankali a ƙarƙashin nauyin zafi, an lulluɓe substrate ɗin da wani kauri mai kauri, mai yawan tsarkin tantalum carbide (TaC). Wannan yana samar da wani wuri mai jure zafi wanda ke jure wafers na SiC da yanayin aiki mai amsawa. Tantalum carbide yana cikin mafi karko kayan yumbu a masana'antar semiconductor, yana da wurin narkewa wanda ya wuce 3880°C da juriya ta musamman ga hydrogen, iskar gas mai ɗauke da halogen, da tururin silicon da aka saba samu a cikin SiC CVD da hanyoyin epitaxial masu yawan zafin jiki.

A cikin masu samar da sinadarin SiC epitaxy, masu riƙe da wafer mai rufi da TaC suna taka muhimmiyar rawa wajen kiyaye daidaiton filin zafi da kuma yanayin zafin wafer iri ɗaya a duk faɗin saman girma. SiC epitaxy yawanci yana faruwa ne a yanayin zafi da ya wuce 1600°C, inda ko da ƙananan matakan zafin jiki na iya haifar da rashin daidaituwar ƙimar girma, canjin dopant, ko lahani na crystalline kamar lahani na tarawa. Rufin TaC yana kiyaye daidaiton saman yayin ɗaukar dogon lokaci a yanayin zafi mai zafi, yana hana tsatsa, ƙananan fasa, ko ɓarnar shafi.

Haka kuma, rawar da mai riƙe wafer ke takawa wajen keɓance sinadarai da kuma sarrafa gurɓatawa. A lokacin SiC epitaxy, masu riƙewa suna ci gaba da fuskantar yanayi mai wadataccen hydrogen da kuma etchants masu ɗauke da chlorine. Kayan gargajiya ko kuma rufin da ba su da aiki sosai suna iya fuskantar lalacewar sinadarai a ƙarƙashin waɗannan yanayi, wanda ke haifar da lalacewar saman da samar da barbashi. Rufin TaC yana aiki azaman shinge mai tasiri da yaɗuwa, yana rage hulɗar sinadarai tsakanin mai riƙewa da iskar gas yayin da yake rage sakin ƙazanta na ƙarfe da samuwar barbashi. Wannan yana ba da gudummawa kai tsaye ga ingantaccen tsabtar ɗaki, tsawaita tazara tsakanin kulawa, da haɓaka yawan amfanin na'ura.

Daga mahangar haɗakar tsari, chucks ɗin wafer da aka shafa da TaC suna ba da damar daidaita wafer mai maimaitawa, daidaiton hulɗar baya, da kuma haɗin zafi mai daidaito - duk suna da mahimmanci don cimma daidaito tsakanin tsari-zuwa-baki a cikin samar da girma. Ƙarfin injinansu da juriyar sinadarai suna tabbatar da dorewar aiki a duk tsawon zagayowar tsari, rage lokacin hutun da ba a tsara ba da kuma rage jimlar farashin mallaka.

Ta hanyar amfani da ƙwarewa mai zurfi a cikin kayan aiki masu zafi da sassan aikin semiconductor, Semixlab tana ƙira da ƙera wafer chucks mai rufi da TaC don biyan buƙatun dandamalin epitaxial na SiC na zamani. Kowane samfuri yana fifita tsarkin abu, daidaiton shafi, da kuma dacewa da tsari, yana tabbatar da ingantaccen aiki koda a cikin mawuyacin yanayin epitaxial. Muna fatan da gaske ga tambayoyinku.