Jirgin ruwan PECVD Graphite don PV
| Place na Origin: | Sin |
| Brand Name: | Semixlab |
| Model Number: | Farashin PGBPV-01 |
| Certification: | ISO9001 |
| Yawancin Maɗaukaki Mafi Girma: | 1 sa |
| Price: | Tuntuɓi don Ƙididdigar Musamman |
| Marufi Details: | Daidaitaccen fakitin fitarwa |
| Bayarwa Lokaci: | Lokacin Bayarwa: Kwanaki 20-35 Bayan Tabbatar da Oda |
| Biyan Terms: | T / T |
| Supply Ability: | saiti 500/wata |
description
Jirgin ruwan PECVD (Plasma Enhanced Chemical Vapor Deposition Boat) shine ainihin kayan aiki mai ɗaukar nauyi wanda aka tsara musamman don masana'antar hoto, wanda aka yi amfani da shi a cikin matakin ƙaddamar da fim na bakin ciki na samar da ƙwayoyin hasken rana mai inganci. An yi shi da kayan daɗaɗɗen tsafta da zafin jiki mai ƙarfi kuma yana iya aiki da ƙarfi a cikin yanayin tsari mai tsauri na PECVD, yana tabbatar da suturar fim ɗin uniform akan wafers na siliki da kuma taimakawa wajen haɓaka ingantaccen juzu'i da amincin sel na dogon lokaci. Wannan samfurin ya dace da jigon silicon nitride (SiNx) ko wasu fina-finai masu aiki a cikin ingantattun sel na photovoltaic kamar su monocrystalline/multicrystalline silicon wafers, TOPcon, da HJT, kuma shine maɓalli mai mahimmanci da ake amfani da shi a cikin layin samar da ƙwayoyin sel na photovoltaic.
Technical sigogi
Material: An yi shi da graphite isostatic (tsarki ≥ 99.99%), yana iya jure yanayin zafin jiki na nan take na 1200 ° C da yawan sanyi da hawan zafi a cikin tsarin PECVD. Matsakaicin haɓakar haɓakar thermal yana ƙasa da 4.5 × 10⁻⁶/°C, yana hana tsagewa da lalacewa. An haɓaka rayuwar sabis da fiye da 30% idan aka kwatanta da kayan gargajiya.
Zane-zanen Filin Zazzage Super Uniform
Babban yanayin zafi na graphite (100-120 W/m·K) haɗe tare da tsarin tashar iska mai kamannin saƙar zuma yana ba da damar tafiyar da zafi mai sauri da iri ɗaya a cikin ɗakin amsawa. Bambancin zafin jiki tsakanin siliki wafers shine ≤ ± 2 ° C, kuma daidaituwar kauri na fim ya kai ± 2.5% (guban masana'antu).
Fasahar Maganin Ƙarƙashin Ƙarƙashin Ƙira
Ana bi da saman tare da rufin silicon carbide (SiC) mai girma ko tsari mai laushi mai laushi (Ra ≤ 0.2μm), wanda ke hana zubar da graphite foda kuma yana kiyaye ƙimar sakin barbashi a ƙasa 5 barbashi / cm², saduwa da buƙatun tsabta na matakan masana'anta na hotovoltaic na ƙarshe.
Anti-oxidation da Tabbataccen Rayuwar Sabis
Za a iya zaɓin zaɓin gradient composite anti-oxidation coatings (irin su Al₂O₃/SiC tsarin multilayer), wanda ke inganta aikin anti-oxidation ta sau 5 a cikin yanayin zafi mai zafi mai dauke da oxygen. Rayuwar sabis ta wuce zagayowar 1500, yana rage yawan farashin samarwa a kowace watt.
Me yasa za a zabi jirgin ruwan graphite PECVD?
Daidaitawar tsari na Photovoltaic: Ƙaƙƙarfan porosity da gyare-gyaren gyare-gyare na fuska don TOPCon phosphor silicon gilashin (PSG) ado, HJT ƙananan zafin jiki da sauran buƙatu na musamman.
Haɓaka farashi: fa'idar farashin dabi'a na kayan graphite + tsawon rayuwar sabis, ana rage ƙimar gabaɗaya sama da 40% idan aka kwatanta da motocin yumbura.
Tabbatarwa da amincin duniya: Ana amfani da samfurin a cikin duniya fiye da 50GW layin samar da hoto, ƙimar gazawar <0.1%.
Semixlab PECVD kwale-kwale:
Daidaitaccen sutura: ± 2.8% → ± 2.1% (an inganta 25%)
Mitar sauya Hull: sau 800 → 1300 sau (62.5% tsawo)
Zazzabi mai dacewa: ≤800°C
Silicon guntu karfinsu: 125mm × 125mm zuwa 210mm × 210mm (goyan bayan gyare-gyare)
Rayuwar sabis: ≥1000 sau (dangane da takamaiman yanayin tsari)
Tashin ƙasa: Ra≤0.5μm (don tabbatar da ƙarancin gurɓataccen ƙwayar cuta)
Ƙarin Bayanan:
1. Wasu sunaye: Jirgin ruwan PECVD, jirgin ruwa na graphite don Tsarin PECVD, Jirgin ruwan PECVD (Mai Ingantaccen Jirgin Ruwan Jirgin Ruwa na Plasma).
2. Aikace-aikacen: masana'antar photovoltaic, wanda aka yi amfani da shi a cikin matakin ƙaddamar da fim na bakin ciki na samar da ƙwayar hasken rana mai inganci.
3. Core sigogi: Tsafta ≥99.995%, yawa 1.80-1.85g / cm³.
bayani dalla-dalla
| Project | Graphite PECVD Boat sigogi |
| Matrix abu | Isostatic graphite manne (yawanci ≥1.85g/cm³, ash ≤50ppm) |
| Tsarin aiki mai iyaka | 1200°C (nan take) / 800°C (ci gaba) |
| Rufi uniformity | ± 2.5% (in-chip) / ± 3% (interchip) |
| Wuya kai | Ra≤0.2μm (nau'in gogewa)/Ra≤0.4μm (nau'in mai rufi) |
| Flexural ƙarfi | ≥60MPa (don tabbatar da kwanciyar hankali a karkashin babban lodi) |
| Tsarin da ya dace | SiNx, SiO₂, amorphous silicon (a-Si) jigon fim |
Aikace-aikace
Yanayin aikace-aikace na yau da kullun
Single crystal PERC cell silicon nitride antireflection film jigo.
TOPCon cell tunneling oxide Layer da polycrystalline silicon Layer shiri.
HJT cell amorphous silicon film jijiya tsari.
Amfanin da ya dace
Figure mafi kyawun yanayin zafi-zazzabi: amfani da manyan-mawuyacin kayan kwalliya, yana iya yin tsayayya da ci gaba mai zurfi na pecvd ba tare da ƙazanta ba, tabbatar da rashin tsaro na dogon lokaci.
Madaidaicin Tsarin Tsara: Ingantaccen tsarin ramuka da fasahar jiyya ta saman yana ba da garantin dumama siliki na wafers yayin aiwatarwa, tare da daidaiton fim a cikin ± 3%, yana haɓaka ingancin baturi da yawan amfanin ƙasa.
Low gurbatawa da rayuwar da ta kasance mai dadewa: Fassi na musamman na kayan fasahar yanayi wanda yake hanawa barbashi m, rage haɗarin gurbata tsari; juriya mai ƙarfi mai ƙarfi yana tabbatar da rayuwar sabis na kan zagayowar 1000, rage yawan farashin abokin ciniki.
Daidaitawa da sassauci: Yana goyan bayan nau'ikan wafer silicon (M6 / M10 / G12, da sauransu) da buƙatun tsari daban-daban, yana ba da tazara na musamman da ƙirar tsarin jirgin ruwa, kuma yana dacewa da kayan aikin PECVD na al'ada (kamar Centrotherm, Meyer Burger, da sauransu).

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